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30 results on '"Dilley, Neil R."'

1. A Magnetoelectric Memory Device Based on Pseudo-Magnetization

Author

Shen, Tingting, Hassan, Orchi, Dilley, Neil R., Camsari, Kerem Y., and Appenzeller, Joerg

Subjects
Physics - Applied Physics
Abstract

We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures. Theoretically, we show how a PE/FM combination can lead to non-volatility in pseudo-magnetization exhibiting ferroelectric-like behavior. The pseudo-magnetization can be manipulated by extremely low voltages especially when the FM is a low-barrier nanomagnet. Using a circuit model benchmarked against experiments, we determine the switching energy, delay, switching probability and retention time of the envisioned 1T/1C memory device in terms of magnetic and circuit parameters and discuss its thermal stability in terms of a key parameter called back-voltage vm which is an electrical measure of the strain-induced magnetic field. Taking advantage of ferromagnetic resonance (FMR) measurements, we experimentally extract values for vm in CoFeB films and circular nano-magnets deposited on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) which agree well with the theoretical values. Our experimental findings indeed indicate the feasibility of the proposed novel device and confirm the assumed parameters in our modeling effort.

Published
2022
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4. Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations

Author

Wang, Ying, Liu, Xinyu, Bac, Seul-Ki, Furdyna, Jacek K., Assaf, Badih A., Zhukovskyi, Maksym, Orlova, Tatyana, Dilley, Neil R, and Rokhinson, Leonid P.

Subjects
Condensed Matter - Materials Science, Quantum Physics
Abstract

We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe growth predominantly in (001) orientation on GaAs(111) and Bi2Se3, but along (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High-resolution transmission electron microscopy measurements reveal an abrupt and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found strong hysteresis for the antiferromagnetic-ferrimagnetic transition. An ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator., Comment: 19pages,13 figures

Published
2021
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5. Electric field control of interaction between magnons and quantum spin defects

Author

Solanki, Abhishek Bharatbhai, Bogdanov, Simeon I., Rustagi, Avinash, Dilley, Neil R., Shen, Tingting, Rahman, Mohammad Mushfiqur, Tong, Wenqi, Debashis, Punyashloka, Chen, Zhihong, Appenzeller, Joerg, Chen, Yong P., Shalaev, Vladimir M., and Upadhyaya, Pramey

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science, Quantum Physics
Abstract

Hybrid systems coupling quantum spin defects (QSD) and magnons can enable unique spintronic device functionalities and probes for magnetism. Here, we add electric field control of magnon-QSD coupling to such systems by integrating ferromagnet-ferroelectric multiferroic with nitrogen-vacancy (NV) center spins. Combining quantum relaxometry with ferromagnetic resonance measurements and analytical modeling, we reveal that the observed electric-field tuning results from ferroelectric polarization control of the magnon-generated fields at the NV. Exploiting the demonstrated control, we also propose magnon-enhanced hybrid electric field sensors with improved sensitivity.

Published
2020

6. Epitaxial Growth of Aurivillius Bi3Fe2Mn2Ox Supercell Thin Films on Silicon

Author

Barnard, James P., primary, Paldi, Robynne L., additional, Kalaswad, Matias, additional, He, Zihao, additional, Dou, Hongyi, additional, Zhang, Yizhi, additional, Shen, Jianan, additional, Zheng, Dongqi, additional, Dilley, Neil R., additional, Sarma, Raktim, additional, Siddiqui, Aleem M., additional, Ye, Peide D., additional, and Wang, Haiyan, additional

Published
2023
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8. Electric field control of interaction between magnons and quantum spin defects

Author

Solanki, Abhishek B., primary, Bogdanov, Simeon I., additional, Rahman, Mohammad M., additional, Rustagi, Avinash, additional, Dilley, Neil R., additional, Shen, Tingting, additional, Tong, Wenqi, additional, Debashis, Punyashloka, additional, Chen, Zhihong, additional, Appenzeller, Joerg, additional, Chen, Yong P., additional, Shalaev, Vladimir M., additional, and Upadhyaya, Pramey, additional

Published
2022
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13. Quantum-classical spin hybrids: leveraging spintronic tools for information processing applications

Author

Rustagi, Avinash, primary, Solanki, Abhishek B., additional, Kajale, Shivam, additional, Bogdanov, Simeon, additional, Dilley, Neil R., additional, Shen, Tingting, additional, Debashis, Punyashloka, additional, Chen, Zhihong, additional, Appenzeller, Joerg, additional, Chen, Yong, additional, Shalaev, Vladimir M., additional, and Upadhyaya, Pramey, additional

Published
2020
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16. Epitaxial Growth of Aurivillius Bi3Fe2Mn2OxSupercell Thin Films on Silicon

Author

Barnard, James P., Paldi, Robynne L., Kalaswad, Matias, He, Zihao, Dou, Hongyi, Zhang, Yizhi, Shen, Jianan, Zheng, Dongqi, Dilley, Neil R., Sarma, Raktim, Siddiqui, Aleem M., Ye, Peide D., and Wang, Haiyan

Abstract

Nanoelectronic devices integrated with functional complex oxides have drawn much attention in recent years. However, due to material and processing compatibility issues, integrating functional complex oxides with Si-based devices is challenging, and success has been limited. As an example, the Bi3Fe2Mn2Ox(BFMO) supercell system, a single-phase layered oxide made by compositing BiFeO3and BiMnO3, has been studied for much of the past decade for its unusual layered Aurivillius structure and magnetic and ferroelectric properties. However, most of the BFMO thin film growth has been demonstrated on single-crystal oxide substrates such as SrTiO3and LaAlO3. In this work, we demonstrate that the BFMO layered supercell phase can be integrated on Si with high epitaxial quality using a buffer stack of TiN/SrTiO3/CeO2. Further understanding of the strain-controlled growth of the BFMO supercell phase has allowed such Si integration. Microstructure, magnetic, ferroelectric, and optical properties of the BFMO films on Si have been characterized and compared with those of BFMO on SrTiO3single-crystal substrates, demonstrating comparable epitaxial quality and physical properties. Integrating multiferroic BFMO oxides on Si demonstrates the potential of layered supercell oxides in practical device applications such as ferroelectric field effect transistors.

Published
2023
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20. Multifield and inverse‐contrast switching of magnetocaloric high contrast ratio MRI labels.

Author

Barbic, Mladen, Dodd, Stephen J., ElBidweihy, Hatem, Dilley, Neil R., Marcheschi, Barbara, Huston, Alan L., Morris, H. Douglas, and Koretsky, Alan P.

Subjects
MAGNETIC transitions, FIRST-order phase transitions, MAGNETIC flux density, MAGNETIC measurements, MAGNETIC moments
Abstract

Purpose: Demonstrating multifield and inverse contrast switching of magnetocaloric high contrast ratio MRI labels that either have increasing or decreasing moment versus temperature slopes depending on the material at physiological temperatures and different MRI magnetic field strengths. Methods: Two iron‐rhodium samples of different purity (99% and 99.9%) and a lanthanum‐iron‐silicon sample were obtained from commercial vendors. Temperature and magnetic field‐dependent magnetic moment measurements of the samples were performed on a vibrating sample magnetometer. Temperature‐dependent MRI of different iron‐rhodium and lanthanum‐iron‐silicon samples were performed on 3 different MRI scanners at 1 Tesla (T), 4.7T, and 7T. Results: Sharp, first‐order magnetic phase transition of each iron‐rhodium sample at a physiologically relevant temperature (~37°C) but at different MRI magnetic fields (1T, 4.7T, and 7T, depending on the sample) showed clear image contrast changes in temperature‐dependent MRI. Iron‐rhodium and lanthanum‐iron‐silicon samples with sharp, first‐order magnetic phase transitions at the same MRI field of 1T and physiological temperature of 37°C, but with positive and negative slope of magnetization versus temperature, respectively, showed clear inverse contrast image changes. Temperature‐dependent MRI on individual microparticle samples of lanthanum‐iron‐silicon also showed sharp image contrast changes. Conclusion: Magnetocaloric materials of different purity and composition were demonstrated to act as diverse high contrast ratio switchable MRI contrast agents. Thus, we show that a range of magnetocaloric materials can be optimized for unique image contrast response under MRI‐appropriate conditions at physiological temperatures and be controllably switched in situ. [ABSTRACT FROM AUTHOR]

Published
2021
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21. Resonant Magnetization Tunneling in Single-Molecule Magnets

Author

Aubin, Sheila M. J., primary, Ruiz, Daniel, additional, Rumberger, Evan, additional, Sun, Ziming, additional, Albela, Belen, additional, Wemple, Michael W., additional, Dilley, Neil R., additional, Ribas, Joan, additional, Maple, M. Brian, additional, Christou, George, additional, and Hendrickson, David N., additional

Published
1999
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26. Resonant magnetization tunneling in the trigonal pyramidal Mn(super IV)Mn(super III)3 complex [Mn4O3Cl(O2CCH3)3(dbm)3]

Author

Aubin, Sheila M.J., Dilley, Neil R., Pardi, Luca, Krzystek, J., Wemple, Michael W., Brunel, Louis-Claude, Maple, M. Brian, Christou, George, and Hendrickson, David N.

Subjects
Magnetization -- Research, Magnetic dipoles -- Research, Coordination compounds -- Research
Abstract

Research was conducted to determine the existence of resonant magnetization tunneling in trigonal pyramidal molecule magnet Mn(super IV)Mn(super III)3 complex [Mn4O3Cl(O2CCH3)3(dbm)3]. The electronic structure of the complex was characterized using high-field EPR data. Results showed evidence for resonant tunneling as observed from ac susceptibility data and dc magnetization hysteresis loops.

Published
1998

28. Resonant magnetization tunneling in the trigonal pyramidal Mn IV Mn III 3 complex...

Author

Aubin, Sheila M.J., Dilley, Neil R., Pardi, Luca, Krzystek, J., Wemple, Michael W., Brunel, Louis-Claude, Maple, M. Brian, Christou, George, and Hendrickson, David N.

Subjects
*MANGANESE, *MAGNETIZATION
Abstract

Investigates the resonant magnetization tunneling process involved in the trigonal pyramidal manganese complex. Equation for the complex; Reference to the magnetic properties of single molecule magnets; Indentification of single-molecule magnets; Methods used to conduct studies on single-molecule magnets.

Published
1998
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29. The origin of the second relaxation process in the [Mn<SUB>12</SUB>O<SUB>12</SUB>(O<SUB>2</SUB>CR)<SUB>16</SUB>(H<SUB>2</SUB>O)<SUB>4</SUB>] single-molecule magnets: ‘Jahn–Teller isomerism’ in the [Mn<SUB>12</SUB>O<SUB>12</SUB>] core

Author

Sun, Ziming, Ruiz, Daniel, Hendrickson, David N., Dilley, Neil R., Maple, M. Brian, Soler, Mönica, Folting, Kirsten, Christou, George, and Ribas, Joan

Abstract

The origin of the second, faster relaxation process in Mn12 molecules has been identified as a different relative orientation of the Jahn–Teller elongation axes of the MnIII ions, which we have termed ‘Jahn–Teller isomerism’.

Published
1999

30. Controllable Phase Transition Properties in VO 2 Films via Metal-Ion Intercalation.

Author

He Z, Qi Z, Yang B, Lu P, Shen J, Dilley NR, Zhang X, and Wang H

Abstract

VO 2 has shown great promise for sensors, smart windows, and energy storage devices, because of its drastic semiconductor-to-metal transition (SMT) near 340 K coupled with a structural transition. To push its application toward room-temperature, effective transition temperature ( T c ) tuning in VO 2 is desired. In this study, tailorable SMT characteristics in VO 2 films have been achieved by the electrochemical intercalation of foreign ions (e.g., Li ions). By controlling the relative potential with respect to Li/Li + during the intercalation process, T c of VO 2 can be effectively and systematically tuned in the window from 326.7 to 340.8 K. The effective T c tuning could be attributed to the observed strain and lattice distortion and the change of the charge carrier density in VO 2 introduced by the intercalation process. This demonstration opens up a new approach in tuning the VO 2 phase transition toward room-temperature device applications and enables future real-time phase change property tuning.

Published
2023
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